DMBT9013 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for low frequency amplifier applications. characteristic symbol rating unit collector-base voltage vcbo 40 v collector-emitter voltage vceo 20 v emitter-base voltage vebo 5 v collector current ic 500 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 pinning 1 = base 2 = emitter 3 = collector rank l h range 120~200 200~350 classification of hfe1 characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 40 - - v ic=100ma, ie=0 collector-emitter breakdown voltage bvceo 20 - - v ic=1ma, ib=0 emitter-base breakdown volatge bvebo 5 - - v ie=100ma, ic=0 collector cutoff current icbo - - 0.1 ma vcb =25v, ie=0 emitter cutoff current iebo - - 0.1 ma veb =3v, ic=0 collector-emitter saturation voltage (1) vce(sat) - - 0.6 v ic=500ma, ib=50ma base-emitter saturation voltage (1) vbe(sat) - - 1.2 v ic=500ma, ib=50ma dc current gain(1) hfe1 120 - 350 - ic=50ma, vce=1v hfe2 40 - - - ic=500ma, vce=1v electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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